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SPEC NO: DSAN0149 REV NO: V.1A DATE: MAY/23/2013
PAGE: 2 OF 7
APPROVED: WYNEC CHECKED: Joe Lee DRAWN: Y.Liu
ERP: 1301000446
Selection Guide
Notes:
1. Luminous intensity/ luminous Flux: +/-15%.
*Luminous intensity value is traceable to the CIE127-2007 compliant national standards.
Absolute Maximum Ratings at TA=25°C
Electrical / Optical Characteristics at TA=25°C
Notes:
1.Wavelength: +/-1nm.
2. Forward Voltage: +/-0.1V.
3.Wavelength value is traceable to the CIE127-2007 compliant national standards.
Notes:
1. 1/10 Duty Cycle, 0.1ms Pulse Width.
2. 2mm below package base.
Part No. Dice Lens Type
Iv (ucd) [1]
@ 10mA
Description
Min. Typ.
High Efficiency Red (GaAsP/GaP)
White Diffused
14000
32000
Common Anode, Rt.
Hand Decimal.
*3600
*9000
SA40-19EWA
Symbol Parameter
Device Typ. Max. Units Test Conditions
λpeak Peak Wavelength
High Efficiency Red
627
nm I
F=20mA
λD [1] Dominant Wavelength
High Efficiency Red
617
nm I
F=20mA
Δλ1/2 Spectral Line Half-width
High Efficiency Red
45
nm I
F=20mA
C Capacitance
High Efficiency Red
15
pF V
F=0V;f=1MHz
VF
[2]
Forward Voltage
(DP)
High Efficiency Red
8.0
(4.0)
10.0
(5.0)
V IF=20mA
IR
Reverse Current
(Per chip)
High Efficiency Red
20
(10)
uA
VR=5V
(V
R=5V)
Parameter
High Efficiency Red
Units
Power dissipation
(DP)
600
(150)
mW
DC Forward Current
(DP)
60
(30)
mA
Peak Forward Current [1]
(DP)
320
(160)
mA
Reverse Voltage
(Per chip)
5
(5)
V
Operating / Storage Temperature
-40°C To +85°C
Lead Solder Temperature[2]
260°C For 3-5 Seconds
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